A method was achieved for fabricating field oxide regions (shallow trench isolation) having raised portions which are self-aligned and extend over edges of device areas. This results in FETs with improved sub-threshold characteristics and lower sub-threshold leakage currents. The method consists of forming...http://www.google.com.au/patents/US6001706?utm_source=gb-gplus-sharePatent US6001706 - Method for making improved shallow trench isolation for semiconductor integrated circuits
