This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The method may comprise providing a substrate comprising...http://www.google.com.au/patents/US6140252?utm_source=gb-gplus-sharePatent US6140252 - Porous dielectric material with improved pore surface properties for electronics applications
