A semiconductor device is disclosed, which comprises source and drain regions formed in a spaced-apart relation to each other on an isolated semiconductor substrate surface, a first conductive layer formed over a channel region between the source and drain regions via a gate insulating film and serving...http://www.google.com.au/patents/US5063431?utm_source=gb-gplus-sharePatent US5063431 - Semiconductor device having a two-layer gate structure
