A DRAM cell having enhanced capacitance attributable to the use of a textured polycrystalline silicon storage-node capacitor plate. The present invention is particularly applicable to DRAM cells which employ a stacked-capacitor design, as such designs generally a conductively-doped polycrystalline silicon...http://www.google.com.au/patents/US5043780?utm_source=gb-gplus-sharePatent US5043780 - DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance
