Methods are provided herein for forming electrode layers over high dielectric constant (high k) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular,...http://www.google.com.au/patents/US20020173130?utm_source=gb-gplus-sharePatent US20020173130 - Integration of High K Gate Dielectric 
