A method for fabricating a semiconductor device includes the steps of forming a barrier conductor layer on a substrate, exposing the barrier conductor layer to a first reducing gas atmosphere at an elevated substrate temperature, forming a metal film on the barrier conductor layer by a CVD process, and...http://www.google.com.au/patents/US6893953?utm_source=gb-gplus-sharePatent US6893953 - Fabrication process of a semiconductor device including a CVD process of a metal film
