A thin film transistor of reversed stagger type having improved characteristics and yet obtained by a simple process, which is fabricated by selectively doping the semiconductor region on the gate dielectric to form the source, drain, and channel forming regions by using ion implantation, ion doping,...http://www.google.com.au/patents/US6500703?utm_source=gb-gplus-sharePatent US6500703 - Insulated gate semiconductor device and process for fabricating the same
