A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a liner layer preferably is deposited into the trench. An anisotropic plasma process is then performed on the trench. A silicon layer may be deposited...http://www.google.com.au/patents/US7271463?utm_source=gb-gplus-sharePatent US7271463 - Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
