A semiconductor device contains a word line, a charge storage region located above the word line, an active layer located above the charge storage region, a patterned etch stop layer located above a first portion of the active layer, and bit lines located over a portion of the etch stop layer and over...http://www.google.com.au/patents/US6825533?utm_source=gb-gplus-sharePatent US6825533 - Inverted staggered thin film transistor with etch stop layer and method of making same
