A method for forming a planar structure on a semiconductor substrate is disclosed. The method comprises the steps of: forming an interlayer dielectric atop said substrate; patterning and etching said interlayer dielectric, stopping at said substrate, to form a contact opening; forming a barrier metal...http://www.google.com.au/patents/US6171963?utm_source=gb-gplus-sharePatent US6171963 - Method for forming a planar intermetal dielectric using a barrier layer
