A semiconductor device with an MOS transistor gate electrode in a stacked structure comprising a silicon layer, a metal silicide layer, a reaction barrier layer such as a metal nitride layer and a metallic layer formed from the bottom upwards has an increased circuit performance owing to a gate resistance-reducing...http://www.google.com.au/patents/US6750503?utm_source=gb-gplus-sharePatent US6750503 - Stacked gate electrode for a MOS transistor of a semiconductor device
