A method for forming a nitrogen-containing oxide thin film by using plasma enhanced atomic layer deposition is provided. In the method, the nitrogen-containing oxide thin film is deposited by supplying a metal source compound and oxygen gas into a reactor in a cyclic fashion with sequential alternating...http://www.google.com.au/patents/US6723642?utm_source=gb-gplus-sharePatent US6723642 - Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition
