A semiconductor memory device, including a first memory cell having a first gate electrode, a first diffusion layer, and a second diffusion layer; a first contact layer connected to the first diffusion layer of the first memory cell; a second contact layer connected to the first contact layer; a second...http://www.google.com.au/patents/US7064375?utm_source=gb-gplus-sharePatent US7064375 - Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereof
