A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a...http://www.google.com.au/patents/US5732016?utm_source=gb-gplus-sharePatent US5732016 - Memory cell structure in a magnetic random access memory and a method for fabricating thereof 
