This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically to the use an alternate etch stop in dual damascene interconnects that improves adhesion between low dielectric constant organic materials. In addition, the etch stop material is...http://www.google.com.au/patents/US6348407?utm_source=gb-gplus-sharePatent US6348407 - Method to improve adhesion of organic dielectrics in dual damascene interconnects
