In NAND type EEPROM capable of high-speed rewriting by ensuring that the memory cell current during write verify read-out operation is larger than that during normal data read-out operation, a NAND cell is composed of a plurality of serially connected memory cells (MC0 through MC31) and selection transistors...http://www.google.com.au/patents/US6330189?utm_source=gb-gplus-sharePatent US6330189 - Nonvolatile semiconductor memory device
