An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission...http://www.google.com.au/patents/US6573537?utm_source=gb-gplus-sharePatent US6573537 - Highly reflective ohmic contacts to III-nitride flip-chip LEDs
