Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having...http://www.google.com.au/patents/US6479409?utm_source=gb-gplus-sharePatent US6479409 - Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent
