A method of eliminating contamination of tunnel oxide in stacked gates due to SAS photoresist process and preventing of n implantation caused by resist residue from the SAS photoresist process in fabricating of semiconductor memory devices is disclosed. The process provides for providing stacked gates...http://www.google.com.au/patents/US6680257?utm_source=gb-gplus-sharePatent US6680257 - Alternative related to SAS in flash EEPROM
