The present invention relates to providing an enhancement-mode (e-mode) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) with a complementary depletion-mode (d-mode) FET on a common group III-V substrate. The depletion mode FET may be another MOSFET, a MEtal-Semiconductor FET (MESFET), a High...http://www.google.com.au/patents/US7952150?utm_source=gb-gplus-sharePatent US7952150 - Enhancement mode MOSFET and depletion mode FET on a common group III-V substrate
