A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all...http://www.google.com.au/patents/US6724009?utm_source=gb-gplus-sharePatent US6724009 - Semiconductor integrated electronic device and corresponding manufacturing method
