A method of fabricating a semiconductor device on a substrate, wherein the substrate comprises a first layer of doped silicon carbide of a first conducting type and exhibits at least one hollow defect. In a first step the positions of the hollow defects in the substrate are identified, whereafter a second...http://www.google.com.au/patents/US6100111?utm_source=gb-gplus-sharePatent US6100111 - Method for fabricating a silicon carbide device
