A floating-gate, electrically-erasable, programmable read-only memory cell is programmed or erased by a high voltage across a thin oxide area between the floating gate and the substrate. A tunnelling phenomena is produced by the high voltage. In order to protect the thin oxide from excessive stress,...http://www.google.com.au/patents/US4628487?utm_source=gb-gplus-sharePatent US4628487 - Dual slope, feedback controlled, EEPROM programming
