Methods for monitoring defects in a process for forming a contact hole, via or trench in a layer of a device in an integrated circuit includes the steps of forming a sacrificial topology on a substrate by duplicating at least a portion of a structure of the device while substituting a material substantially...http://www.google.com.au/patents/US6121156?utm_source=gb-gplus-sharePatent US6121156 - Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
