A method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress...http://www.google.com.au/patents/US7285503?utm_source=gb-gplus-sharePatent US7285503 - Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition
