A method for the formation of buried gates in a semiconductor device using epitaxial growing method combined with diffusion method or diffusion by an additional heat treatment. The buried gate has smaller gate resistance by providing relatively high impurity concentration and also having good reverse...http://www.google.com.au/patents/US4528745?utm_source=gb-gplus-sharePatent US4528745 - Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques
