A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal...http://www.google.com.au/patents/US8143688?utm_source=gb-gplus-sharePatent US8143688 - Highly-depleted laser doped semiconductor volume
