An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chip (2) through the n-GaN layer (14). A p-electrode (16) of the LED chip (2) has...http://www.google.com.au/patents/US7420218?utm_source=gb-gplus-sharePatent US7420218 - Nitride based LED with a p-type injection region
