A dry-etching method for performing anisotropic etching on a semiconductor substrate by employing an etching gas together with a film-forming gas while irradiating light or an X-ray on the semiconductor substrate. In this method at least one of the etching gas or film-forming gas is excited in a separated...http://www.google.com.au/patents/US4668337?utm_source=gb-gplus-sharePatent US4668337 - Dry-etching method and apparatus therefor
