In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y<x) quantum well layers and which is sandwiched by said cladding layers, superlatticed structures having an altervative lamination of In(Ga.sub.1-x...http://www.google.com.au/patents/US4860297?utm_source=gb-gplus-sharePatent US4860297 - Quantum well semiconductor laser device
