A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3.degree. from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type...http://www.google.com.au/patents/US5187547?utm_source=gb-gplus-sharePatent US5187547 - Light emitting diode device and method for producing same
