Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate,...http://www.google.com.au/patents/US7899103?utm_source=gb-gplus-sharePatent US7899103 - Side light emitting type semiconductor laser diode having dielectric layer formed on active layer
