It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this...http://www.google.com.au/patents/US7303785?utm_source=gb-gplus-sharePatent US7303785 - Antireflective film material, and antireflective film and pattern formation method using the same
