A gate dielectric containing LaAlO3 and method of fabricating a gate dielectric contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics...http://www.google.com.au/patents/US20050145957?utm_source=gb-gplus-sharePatent US20050145957 - Evaporated LaAlO3 films for gate dielectrics
