A common InP semiconductor substrate device includes a laser emitter H1 for emitting waves having a first wavelength such as 1,300 nm, a photodiode H2 for receiving and detecting waves having a second wavelength such as 1,550 nm, and a separator G absorbing the waves having the first wavelength, the...http://www.google.com.au/patents/US6148015?utm_source=gb-gplus-sharePatent US6148015 - Device, in particular a semiconductor device, for processing two waves, in particular light waves
