A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predetermined part of the pad metal by patterning...http://www.google.com.au/patents/US20050090035?utm_source=gb-gplus-sharePatent US20050090035 - Method for fabricating CMOS image sensor protecting low temperature oxide delamination
