A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1E5 Ω cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm....http://www.google.com.au/patents/US7727919?utm_source=gb-gplus-sharePatent US7727919 - High resistivity silicon carbide
