A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer....http://www.google.com.au/patents/US7544606?utm_source=gb-gplus-sharePatent US7544606 - Method to implement stress free polishing
