A method of fabricating a semiconductor device, where the method includes forming a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on...http://www.google.com.au/patents/US7528051?utm_source=gb-gplus-sharePatent US7528051 - Method of inducing stresses in the channel region of a transistor
