A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region...http://www.google.com.au/patents/US6204111?utm_source=gb-gplus-sharePatent US6204111 - Fabrication method of capacitor for integrated circuit
