An infrared photodetector formed of a MOS tunneling diode is disclosed. The infrared photodetector comprises a conducting layer, a semiconductor layer comprising at least one layer of quantum structure for confining a carrier in a barrier, an insulating layer formed between the conducting layer and the...http://www.google.com.au/patents/US20040201009?utm_source=gb-gplus-sharePatent US20040201009 - Infrared photodetector
