There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge...http://www.google.com.au/patents/US7309900?utm_source=gb-gplus-sharePatent US7309900 - Thin-film transistor formed on insulating substrate
