A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole...http://www.google.com.au/patents/US5479033?utm_source=gb-gplus-sharePatent US5479033 - Complementary junction heterostructure field-effect transistor
