A resistor (45) of semiconductor material is formed on an insulating layer (42), then a silicon nitride film (46) is deposited on the entire surface including the resistor (45), and a silicon dioxide film (47) is sequentially deposited thereon, and thereafter electrodes (49A) and (49B)of the resistor...http://www.google.com.au/patents/US5356825?utm_source=gb-gplus-sharePatent US5356825 - Method of manufacturing semiconductor devices
