A design structure of a trench capacitor with an isolation collar in a semiconductor substrate where the substrate adjacent to the isolation collar is free of dopants caused by auto-doping. The design structure resulting from the means for fabricating the trench capacitor includes the methods of forming...http://www.google.com.au/patents/US20090121270?utm_source=gb-gplus-sharePatent US20090121270 - DESIGN STRUCTURE FOR A TRENCH CAPACITOR
