A method of forming a memory device includes forming first and second isolation structures on a semiconductor substrate, the first and second isolation structures defining an active region therebetween; and etching a portion of the semiconductor substrate provided within the active region to define a...http://www.google.com.au/patents/US7659179?utm_source=gb-gplus-sharePatent US7659179 - Method of forming transistor using step STI profile in memory device
