A semiconductor device may include a stress layer and a strained superlattice layer above the stress layer and including a plurality of stacked groups of layers. More particularly, each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers...http://www.google.com.au/patents/US7612366?utm_source=gb-gplus-sharePatent US7612366 - Semiconductor device including a strained superlattice layer above a stress layer
