The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O.sub.3. When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced,...http://www.google.com.au/patents/US5933760?utm_source=gb-gplus-sharePatent US5933760 - Method and apparatus for reducing fixed charge in semiconductor device layers
