Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and...http://www.google.com.au/patents/US8133785?utm_source=gb-gplus-sharePatent US8133785 - Semiconductor device and method of manufacturing the same
