A quadruple gate field effect transistor (FET) is provided on the semiconductor-on-insulator or semiconductor-on-insulator (SOI) structure or a bulk semiconductor structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate...http://www.google.com.au/patents/US5936280?utm_source=gb-gplus-sharePatent US5936280 - Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices
